Lake Shore probe station enables Georgia Tech high-speed chip R&D

IEEE Electron Device Letters, R&D Magazine, AZoNano.com, MachineDesign.Com, and other publications published news out of Georgia Institute of Technology about achieving a significant milestone earlier this year in transistor performance. Electrical engineers at the university determined that a transistor built at Germany’s IHP-Innovations for High Performance Microelectronics is the world’s fastest silicon-based transistor chip, clocking in at 798 GHz fMAX. This is 200 GHz faster than the previous record holder!

You can read all about their work here. Georgia Tech researchers used a Lake Shore cryogenic probe station to cool the silicon-germanium chip to 4.3 K to achieve these speeds. Although these operating speeds were achieved at extremely cold temperatures, the research suggests that record speeds at room temperature aren’t far off, said Professor John D. Cressler, who led the research for Georgia Tech.

This is a great example of how measuring material properties as a function of temperature is important to the development of faster electronic devices. The probe station used for these measurements (shown in the photos below) operates with liquid helium and is an earlier version of our Model CPX. This station has been supporting research in Professor Cressler’s group for many years.

In fact, this isn’t the first time this Lake Shore probe station has played a role in groundbreaking chip-speed research at Georgia Tech. In 2006, the university teamed with IBM in setting a chip speed record for that time, as summarized in this New York Times article.

Georgia Tech Professor John D. Cressler and graduate student Adilson S. Cardoso

Georgia Tech Professor John D. Cressler (left), whose team conducted the university’s silicon-germanium chip research, is shown with graduate student Adilson S. Cardoso at the cryogenic probe station, an earlier version of the Lake Shore Model CPX.
(Photo by Rob Felt, Georgia Tech)

Lake Shore probe station

The high-speed silicon-germanium chips and measurements probes, as seen inside the cryogenic probe station used at Georgia Tech.
(Photo by Rob Felt, Georgia Tech)

4 comments

  1. […] Lake Shore’s probe stations are specifically designed for on-wafer probing and measurement of device samples as a function of temperature and field. Interrogating samples at cryogenic temperatures and in high magnetic fields can reveal certain mechanisms of novel materials, particularly in semiconductor and nanoscale device research. Low-temperature operation is becoming increasingly important in the development of new electronic devices, including high-speed SiGe-based transistors. […]

  2. […] become increasingly significant inside the development of brand-new electronic equipment, including high-speed SiGe-based transistors.Lake Shore offers four cryogen-free CCR probe stations and six liquid cryogen models, and a broad […]

  3. […] Lake Shore Cryotronics, a leading innovator in solutions for measurement over a wide range of temperature and magnetic field conditions, announced today that it will be exhibiting at the June 3 5 IEEE MTT International Microwave Symposium (IMS) in Tampa Bay, Fla., where it will discuss platforms that enable the study of devices and materials using high-frequency measurements.Platforms include Lake Shore s industry-leading probe stations for non-destructive probing of materials and test devices, whether for the study of electrical, magneto-transport, DC, RF or microwave properties. They are useful for carbon-based nanotube (CNT), graphene, MEMS, gallium-nitride (GaN), silicon-germanium (SiGe), superconducting device and organic semiconductor research.Lake Shore s probe stations are especially tailored for on-wafer probing plus measuring of device samples because a function of temperature plus field. Interrogating samples at cryogenic temperatures plus inside excellent magnetic fields may show certain components of unique components, especially inside semiconductor plus nanoscale device analysis. Low-temperature procedure is starting to become increasingly significant inside the development of brand-new electronic equipment, including high-speed SiGe-based transistors. […]

  4. […] Lake Shore probe stations are specifically designed for on-wafer probing and measurement of device samples as a function of temperature and field. Interrogating samples at cryogenic temperatures and in high magnetic fields can reveal certain mechanisms of novel materials, particularly in semiconductor and nanoscale device research. Low-temperature operation is becoming increasingly important in the development of new electronic devices, including high-speed SiGe-based transistors. […]

Leave a Reply

Fill in your details below or click an icon to log in:

WordPress.com Logo

You are commenting using your WordPress.com account. Log Out / Change )

Twitter picture

You are commenting using your Twitter account. Log Out / Change )

Facebook photo

You are commenting using your Facebook account. Log Out / Change )

Google+ photo

You are commenting using your Google+ account. Log Out / Change )

Connecting to %s

%d bloggers like this: